Technical Specification
80V Collector Emitter Breakdown Voltage, 80V Collector Base Breakdown Voltage, 1.5A Collector Current, 12.5W Power, 250 DC Current Gain, SOT-32 Case, Epitaxial Planar Construction,
Device Case VCB VCE VEB IC PTOT hFE fT
style max. (V) max. (V) max. (V) max. (A) max. (W) min. @IC min. (MHz)
TIP41C TO-220 40 40 5 6 65 15@3A 3
TIP31 TO-220 40 40 5 3 2 25@1A 3
BD135 TO-126 45 45 5 1.5 12.5 40@150mA –
BD135-10 (DC) TO-126 45 45 5 1.5 8 63@150mA 160
BD135-10 (ST) TO-126 45 45 5 1.5 12.5 40@150mA –
BD437 TO-126 45 45 5 4 36 85@500mA 3
BD437 TO-126 45 45 5 4 36 85@500mA 3
2N3053 TO-39 60 40 5 0.7 5 100
TIP31A TO-220 60 60 5 3 40 10@1mA –
TIP41A TO-220 60 60 5 6 65 15@3mA 3
TIP29A TO-220 60 60 5 1 30 40@200mA 3
2N5886G TO-3 80 80 5 25 200 4
2N6039G TO-126 80 80 5 4 40 –
2N6388 TO-220 80 80 5 10 65 –
2N3055 TO-3 100 60 7 15 115 5@10mA 3
TIP3055 TO-3PN 100 60 7 15 90 70@4A 2.5
BD139 TO-126 100 80 5 1.5 12.5 40@150 –
BD139 TO-126 100 80 5 1.5 12.5 40@250mA –
BD911 TO-220 100 100 5 15 90 15@5mA –
2N3055H TO-3 100 100 7 15 100 20@4mA 2.5
TIP31C TO-220 100 100 5 3 40 25@1mA 3
TIP31C TO-220 100 100 5 3 40 25@1mA 3
TIP29C TO-220 100 100 5 1 30 40@200mA 3
2N6284 TO-3 100 100 5 20 160 –
2N3019 TO-39 140 80 7 1 5 100
2N5038 TO-3 150 90 7 20 140 –
2N3773 TO-3 160 140 7 16 150 15@60mA –
MJE340 TO-126 300 300 3 0.5 20 30@50mA –
TIP47 TO-220 350 250 5 1 40 30@300mA 10
2N6547 TO-3 850 400 9 15 175 6