BC516 PNP Darlington Transistor

Absolute Maximum Ratings TA=25°C unless otherwise noted
Electrical Characteristics TA=25°C unless otherwise noted
NOTES:
1. Pulse Test Pulse Width ≤ 2%
2. fT = IhfeI · ftest
Thermal Characteristics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 10 V
IC Collector Current - Continuous 1 A
PD Total Power Dissipation TA = 25°C 625 mW
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 30 V
VCBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 40 V
VEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 10 V
ICBO Collector Cutoff Current VCB = 30V, IE = 0 100 nA
hFE DC Current Gain IC = 20mA, VCE = 2V 30,00
0
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1 V
VBE(on) Base-Emitter On Voltage IC = 10mA, VCE = 5V 1.4 V
fT Current Gain Bandwidth Product (2) IC = 10mA, VCE = 5V, f = 100MHz 200 MHZ
Symbol Parameter Max. Units
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
RθJC Thermal Resistance, Junction to Case 83.3 °C/W

Data Sheet